Basic Profile

　　Chinese alias: monocrystalline silicon

　　English name: Monocrystalline silicon single-crystal silicon

　　Monocrystalline silicon is a more active nonmetallic element, is an important component of crystalline materials, has been at the forefront of new energy development. Mainly used for semiconductor materials and solar photovoltaic industry. In recent years due to the rapid development of solar photovoltaic industry, also led to a sustained, rapid development of the silicon industry.

　　Diamond lattice of silicon atoms arranged in a plurality of nuclei when molten elemental silicon in the solidification, if these nuclei grow into the same crystal orientation of grains, these grains will be crystallized into a parallel combination of single-crystal silicon. Single-crystal silicon has the physical properties of metalloid, a weak electrical conductivity, the conductivity increases with increasing temperature, a significant semiconductive. Ultrapure single crystal silicon is an intrinsic semiconductor. Incorporated in ultrapure single crystal silicon ⅢA trace elements, such as boron can improve the degree of conductivity, and a p-type silicon semiconductor; trace ⅤA incorporated as elements such as phosphorus or arsenic can also improve the degree of conductivity, an n-type silicon semiconductor. Monocrystalline silicon production method is usually first obtained polysilicon or amorphous silicon, followed by Czochralski method or the floating zone melting growth of a single crystal silicon rod from the melt. Single-crystal silicon is mainly used for the production of semiconductor elements.

　　Uses: It is a raw material for manufacturing a semiconductor silicon devices used in making high-power rectifiers, power transistors, diodes, switches and other devices.

　　Text

　　A form of elemental silicon. The molten elemental silicon during solidification diamond lattice of silicon atoms arranged in a plurality of nuclei, if these nuclei grow into the same crystal orientation of grains, these grains will combine parallel crystal silicon (see pictures ).

　　Single-crystal silicon has the physical properties of metalloid, a weak electrical conductivity, the conductivity increases with increasing temperature; significant semiconductive. Ultrapure single crystal silicon is an intrinsic semiconductor. Incorporated in ultrapure single crystal silicon ⅢA trace elements, such as boron can improve the degree of conductivity, and a p-type silicon semiconductor; trace ⅤA incorporated as elements such as phosphorus or arsenic can also improve the degree of conductivity, an n-type silicon semiconductor.

　　Monocrystalline silicon production method is usually first obtained polysilicon or amorphous silicon, followed by Czochralski method or the floating zone melting growth of a single crystal silicon rod from the melt. Single-crystal silicon is mainly used for the production of semiconductor elements.

　　With pictures

　　Silicon rods

　　Monocrystalline silicon production process are detailed below:

　　Fixed: The silicon rods fixed in the processing stage.

　　Slice: silicon rods into thin wafers with precise geometry. This process produces silicon powder using water washout, produce waste water and silicon slag.

　　Annealing: duplex thermal oxidation furnace after nitrogen purge with infrared heating to 300 ~ 500 ℃, the surface of silicon and oxygen react with the wafer surface to form a protective layer of silicon dioxide.

　　Chamfer: The annealed wafers trimmed into a circular shape, wafer edge to prevent cracking and lattice defects, increase flatness of the epitaxial layer and the photoresist layer. This process produces silicon powder using water washout, produce waste water and silicon slag.

　　Sub-file detection: To ensure silicon specifications and quality, its testing. Here will produce waste. Grinding: The grinding tablets to remove saw marks and surface damage layer slices and round mill had made to effectively improve the curvature, flatness and parallelism of the silicon wafer, a polishing process to achieve the specification can handle. This process generates waste grinding tablets.

　　Cleaning: by dissolution in an organic solvent, combined with ultrasonic cleaning technique of the wafer surface to remove organic impurities. This process produces organic waste and waste organic solvents.

　　RCA cleaning: removing the silicon surface particulate matter and metal ions through multi-channel cleaning.

　　SPM Cleaning: H2SO4 solution and H2O2 solution in proportion dubbed SPM solution, SPM solution has strong oxidation ability, can be dissolved in the cleaning liquid metal oxidation and oxidation of organic pollutants into CO2 and H2O. SPM can be used to clean silicon wafer surface to remove organic contaminants and some metals. This process will produce sulfuric acid mist and spent sulfuric acid.

　　DHF cleaning: natural oxide film of the wafer surface with a certain concentration of hydrofluoric acid is removed, and the natural oxide film adhered to a metal has been dissolved in the cleaning liquid while DHF inhibits the formation of an oxide film. This process produces hydrogen fluoride and hydrofluoric acid waste.

　　APM cleaning: APM solution by a certain percentage of NH4OH solution, H2O2 solution composition, the wafer surface due to the oxidation of H2O2 oxide film (about 6nm rendered hydrophilic), the oxide film has been NH4OH corrosion, oxidation took place immediately after etching, oxidation and corrosion are repeated, so attached to the silicon surface of the particles and metals with corrosion layer falls within the cleaning liquid. Ammonia and ammonia waste produced here.

　　HPM cleaning: from HCl solution and H2O2 solution composed by a certain percentage of HPM, for removing the silicon surface sodium, iron, magnesium and zinc and other metal contaminants. This process produces hydrogen chloride and waste hydrochloric acid.

　　DHF cleaning: a step of removing the oxide film on the surface of the silicon produced.

　　Grinding detection: detection after grinding, wafer quality RCA cleaned, do not meet the requirements from the new ground and RCA cleaning.

　　Corrosion A / B: damage layer after slicing and grinding machining, the wafer surface is formed by machining stress, usually removed by chemical etching. A corrosion corrosion is acidic, with a mixed acid solution to remove the damaged layer to produce hydrogen fluoride, NOX and spent mixed acid; corrosion B is an alkaline etching with sodium hydroxide solution to remove the damaged layer generated waste lye. This part of the project by etching silicon wafers A, by etching part B.

　　Binning monitoring: silicon wafer damage detection, the presence of silicon re-corrosion damage.

　　Rough polishing: abrasive removal of the damaged layer using a general removal in 10 ~ 20um. Rough polishing waste generated here.

　　Fine polishing: Use refining agents improve slightly rough surface of the wafer level, the general removal 1um or less to a high flatness silicon. Produce fine polishing waste.

　　Detection: Check silicon meets the requirements, do not meet the new polished or from RCA cleaning.

　　Detection: Check the wafer surface is clean from dirty surfaces such as new scrub until clean.

　　Packaging: The monocrystalline silicon polished wafer packaging.

　　The main purpose of folding

　　Single-crystal silicon is mainly used for the production of semiconductor elements.

　　Uses: It is a raw material for manufacturing a semiconductor silicon devices used in making high-power rectifiers, power transistors, diodes, switches and other devices

　　Now, our lives everywhere, "silicon" figure and role of crystalline silicon solar cells in the last 15 years the fastest growing form of industrialization.

　　Diamond lattice of silicon atoms arranged in a plurality of nuclei when molten elemental silicon in the solidification, if these nuclei grow into the same crystal orientation of grains, these grains will be crystallized into a parallel combination of single-crystal silicon.

　　Monocrystalline silicon production method is usually first obtained polysilicon or amorphous silicon, followed by Czochralski method or the floating zone melting growth of a single crystal silicon rod from the melt.

　　Monocrystalline silicon rod production of raw materials, with the rapid increase in domestic and international market demand for silicon wafers, silicon rods demand also showed rapid growth trend.

　　A single crystal silicon wafer according to their diameter into 6 inches, 8 inches, 12 inches (300 mm) and 18 inches (450 mm) and the like. The larger the diameter of the wafer, the more integrated circuits that can be engraved, the lower the cost of the chip. But the size of the wafer material and technical requirements are also higher. Monocrystalline silicon crystal elongation different methods, divided into Czochralski (CZ), zone melting method (FZ) and epitaxy. Czochralski method, zone melting elongated monocrystalline silicon rods, single crystal silicon epitaxy stretch film. Czochralski elongated monocrystalline silicon is mainly used for semiconductor integrated circuits, diodes, epitaxial substrates, solar cells.