BT136-600D

名称:BT136-600D

供应商:深圳市群方电子有限公司

价格:面议

最小起订量:1/个

地址:深圳市福田区中航路国利大厦A座1008室

手机:13723736447

联系人:张小姐 (请说在中科商务网上看到)

产品编号:50087916

更新时间:2021-03-18

发布者IP:113.118.111.83

详细说明

  PIN DESCRIPTION

  1 main terminal 1

  T2 T1

  2 main terminal 2

  3 gate

  1 2 3 G

  tab main terminal 2

  LIMITING VALUES

  Limiting values in accordance with the Absolute Maximum System (IEC 134).

  SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

  -500 -600 -800

  VDRM Repetitive peak off-state - 5001 6001 800 V

  voltages

  I RMS on-state current full sine wave; T ≤ 107 ?C - 4 A

  T(RMS) mb

  I Non-repetitive peak full sine wave; T = 25 ?C prior to

  TSM j

  on-state current surge

  t = 20 ms - 25 A

  t = 16.7 ms - 27 A

  2 2 2

  I t I t for fusing t = 10 ms - 3.1 A s

  dI /dt Repetitive rate of rise of I = 6 A; I = 0.2 A;

  T TM G

  on-state current after dIG/dt = 0.2 A/μs

  triggering T2+ G+ - 50 A/μs

  T2+ G- - 50 A/μs

  T2- G- - 50 A/μs

  T2- G+ - 10 A/μs

  IGM Peak gate current - 2 A

  VGM Peak gate voltage - 5 V

  PGM Peak gate power - 5 W

  PG(AV) Average gate power over any 20 ms period - 0.5 W

  Tstg Storage temperature -40 150 ?C

  Tj Operating junction - 125 ?C

  temperature

  1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

  switch to the on-state. The rate of rise of current should not exceed 3 A/μs.