优惠销售 SEMIKRON低损耗型

　　产品网

　　Features

　　? MOS input (voltage controlled)

　　? N channel, homogeneous Silicon

　　structure (NPT-Non punch

　　through-IGBT)

　　? Low inductance case

　　? Very low tail current with low

　　temperature dependence

　　? High short circuit capability,

　　self limiting to 6 * Icnom

　　? Latch-up free

　　? Fast & soft inverse CAL diodes 8)

　　? Isolated copper baseplate using

　　DCB Direct Copper Bonding

　　Technology without hard mould

　　? Large clearance (12 mm) and

　　creepage distances (20 mm)

　　Typical Applications

　　? Switching (not for linear use)

　　? Inverter drives

　　? UPS

　　推荐产品:IGBT模块

　　相关推荐: