详细说明
Features
? N channel, homogeneous Silicon
structure (NPT- Non punchthrough
IGBT)
? Low tail current with low
temperature dependence
? High short circuit capability, self
limiting if term. G is clamped to E
? Pos. temp.-coeff. of VCEsat
? 50 % less turn off losses 9)
? 30 % less short circuit current 9)
? Very low Cies, Coes, Cres
9)
? Latch-up free
? Fast & soft inverse CAL diodes 8)
? Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
? Large clearance (10 mm) and
creepage distances (20 mm)
Typical Applications
? Switching (not for linear use)
? Switched mode power supplies
? UPS
? Three phase inverters for servo /
AC motor speed control
? Pulse frequencies also > 10 kHz
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