FEATURES SUMMARY

　　■ SUPPLY VOLTAGE

　　–VCC = 2.7V to 3.6V for Program, Erase

　　and Read

　　■ ACCESS TIMES: 70, 90ns

　　■ PROGRAMMING TIME

　　– 10µs per Byte/Word typical

　　■ 35 MEMORY BLOCKS

　　– 1 Boot Block (Top or Bottom Location)

　　– 2 Parameter and 32 Main Blocks

　　■ PROGRAM/ERASE CONTROLLER

　　– Embedded Byte/Word Program

　　algorithms

　　■ ERASE SUSPEND and RESUME MODES

　　– Read and Program another Block during

　　Erase Suspend

　　■ UNLOCK BYPASS PROGRAM COMMAND

　　– Faster Production/Batch Programming

　　■ TEMPORARY BLOCK UNPROTECTION

　　MODE

　　■ COMMON FLASH INTERFACE

　　– 64 bit Security Code

　　■ LOW POWER CONSUMPTION

　　– Standby and Automatic Standby

　　■ 100,000 PROGRAM/ERASE CYCLES per

　　BLOCK

　　■ ELECTRONIC SIGNATURE

　　– Manufacturer Code: 0020h

　　– Top Device Code M29W160ET: 22C4h

　　– Bottom Device Code M29W160EB: 2249h