The 413 EchoprobeTM sensor uses patent pending infrared (IR) interferometric technique, which provides a direct and accurate map of thick to ultra-thin wafers measurement of substrate thickness, and thickness variation (TTV). Several materials transparent in IR beam, such as Si, GaAs, InP, SiC, Glass, Quartz and many polymers are readily measured with standard spatial resolution of 60 microns spot, (smaller spot sizes are available). Using a Single probe system, substrate thickness of conventional wafers with patterns, tapes, bumps or bonded wafers mounted on carriers can be determined with high precision and accuracy. When configured as a Dual probe system, the 413 also provides measurements of total thickness of the wafer, including substrate thickness and the patterned height thickness. Options are available to measure wafer warp, trench depth and via holes, including high aspect ratio trenches and vias in MEMs type applications. Various specialized MEMs applications including membrane metrology are also available.

　　413反射探针传感器使用红外干涉仪技术，它可以对厚的及超薄的硅片及基板厚度和厚度变化提供直接精确的映像；几种红外光束下的透明材质，比如Si, GaAs, InP, SiC,玻璃、石英和很对聚合物都可以用标准距离60微米的点测量（也可以用更小的点距）；使用单探针系统，转载于承载器的传统图案硅片，胶带，凹凸或者粘合硅片都可以高精度准确的测量；如果设计成双探针系统，413也可以提供硅片总厚度，包括基板厚度和图案高度厚度的测量；也可以设计测量硅片翘曲、槽深、过孔，包括高纵横比的槽和MEMS类型应用的过孔；各种专业MEMS应用包括薄膜测量都可用；