亿光 EL817

名称:亿光 EL817

供应商:深圳市博天电子有限公司

价格:面议

最小起订量:0/

地址:

产品编号:33881148

更新时间:2011-05-11

发布者IP:

详细说明

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  Features: EL817L Series

  • Current transfer ratio

  (CTR:MIN.50% at IF =5mA ,VCE =5V)

  • High isolation voltage between input

  and output (Viso=5000 V rms )

  • Compact dual-in-line package

  EL817L*:1-channel type

  • Pb free

  • UL approved (No. E214129)

  • VDE approved (No. 132249)

  • DEMKO approved (No. 310352-04)

  • FIMKO approved (No. FI 16763A2)

  • BSI approved (No. 8592 / 8593)

  • Options available:

  - Leads with 0.4”(10.16mm) spacing (M Type)

  - Leads bends for surface mounting (S Type)

  - Tape and Reel of TypeⅠ for SMD(Add”-TA” Suffix)

  - Tape and Reel of TypeⅡ for SMD(Add”-TB” Suffix)

  - The tape is 16mm and is wound on a 33cm reel

  • The product itself will remain within RoHS compliant version.

  Description

  The EL817 series contains a infrared emitting diode optically

  coupled to a phototransistor. It is packaged in a 4-pin DIP package

  and available in wide-lead spacing and SMD option.

  Applications

  • Computer terminals

  • System appliances, measuring instruments

  • Registers, copiers, automatic vending machines

  • Cassette type recorder

  • Electric home appliances, such as fan heaters, etc.

  • Signal transmission between circuits of different potentials

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  and impedances EL817L Series

  Device Selection Guide

  Chip Material

  Part. No.

  IR PT

  EL817* GaAs Silicon

  Package Dimensions

  E L 8 1 7

  E V E R L I G H T

  Anode mark Week code*4

  Year code*3

  Rank mark*1

  Factory identification mark*2

  L

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  Package Dimensions

  Notes:

  1. Rank shall be or shall not be marked

  2. Factory code shall be marked (T: Taiwan / C: China)

  3. Year date code

  4. 2-digit work week

  5. All dimensions are in millimeters

  6. Specifications are subject to change without notice

  M Type

  S Type

  E L 8 1 7

  E V E R L I G H T

  E L 8 1 7

  E V E R L I G H T

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  Absolute Maximum Ratings ( Ta=25°C )

  Parameter Symbol Rating Unit

  Forward Current IF 80 mA

  Input Reverse Voltage VR 6 V

  Power Dissipation P 150 mW

  Collector Power Dissipation PC 150 mW

  Output Collector Current IC 50 mA

  Collector-Emitter Voltage VCEO 35 V

  Emitter-Collector Voltage VECO 6 V

  Total Power Dissipation Ptot 200 mW

  *1 Isolation Voltage Viso 5000 V rms

  Operating Temperature Topr -55~+110 °C

  Storage Temperature Tstg -55~+125 °C

  *2 Soldering Temperature Tsol 260 °C

  *1 AC for 1 minute, R.H= 40~ 60%RH

  -Isolation voltage shall be measured using the following method.

  ) (1) Short between anode and cathode on the primary side and

  ) between collector, emitter and base on the secondary side.

  ) (2) The isolation voltage tester with zero-cross circuit shall be used.

  ) (3) The waveform of applied voltage shall be a sine wave

  *2 For 10 seconds

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  Electro-Optical Characteristics (Ta=25°C)

  Parameter Symbol Min. Typ. Max. Unit Condition

  Forward VF - 1.2 1.4 V IF=20mA

  Reverse

  Current

  Input IR - - 10 uA VR=4V

  Terminal Ct - 30 250 pF V=0,f=1kHz

  Collector

  Dark current

  ICEO - - 100 nA VCE=20V

  Output Collector-

  Emitter

  breakdown

  voltage

  BVCEO 80 - - V Ic=0.1mA

  Current

  Transfer

  ratio

  CTR 50

  -

  600 % IF=5mA ,VCE=5V

  Collector-

  Emitter

  saturation

  voltage

  VCE(sat) - 0.1 0.2 V IF=20mA ,Ic=1 mA

  Isolation

  resistance

  RISO 5×1010 1011 - Ω DC500V,40~60%R.H

  Floation

  capacitance

  Cf - 0.6 1.0 pF V=0, f=1MHz

  Cut-off

  frequency

  fc - 80 - kHz VCE=5V, IC=2 mA

  RL=100Ω, -3dB

  Transfer

  Characteristics

  Rise time tr - 4 18 us

  VCE=2V

  IC=2mA,RL=100Ω

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  Fall time tf - 3 18 us

  Supplement

  Current Transfer Ratio CTR

  Sub-Model No. Rank mark CTR (%) Condition

  EL817* note 1 50 to 600

  EL817* (A) A 80 to 160

  EL817* (B) B 130 to 260

  EL817* (C) C 200 to 400

  EL817* (D) D 300 to 600

  IF = 5 mA

  VCE = 5 V

  Ta = 25°C

  Note1. The symbol “ * “ can be none or S or M by different leads form request

  Note2. The symbol “ ( ) ” can be CTR rank

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  20mA

  10mA

  Ic =0.5mA

  1.0mA

  3.0mA

  5.0mA

  7.0mA

  (Ta=25°C)

  Fig. 3

  (Ta=25°C)

  5mA

  30mA

  IF =5mA

  VCE=5V

  IF=20mA

  Ic=1mA

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  50Ω Output

  Vcc

  Input

  Input

  Output 10%

  90%

  100Ω

  VCE=20V

  VCE=2V

  IC=2mA

  Ta=25°C

  VCE=2V

  IC=2mA

  Ta=25°C

  RL=10KΩ

  1KΩ

  100Ω

  tr

  tf

  td

  ts

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  RELIABILITY PLAN

  􀁺 The reliability of products shall be satisfied with items listed below.

  Confidence level : 90 % , LTPD : 10 %

  EVERLIGHT ELETCRONICS CO., LTD

  Technical Data Sheet Preliminary

  Photocoupler

  Device No: Prepared date:07-20-2005 Prepared by:Eric chen

  EL817L Series

  1. Tube Packing Specifications ( For Dip & M Type)

  1. Tube

  Classification Test Item Description & Condition (Acc.)

  Sample

  Failure

  Criteria

  Reference

  Standard

  Operation Life * Ta = 25 ± 3°C

  IR: If = 50 mA

  Pt: Pc = 130 mW ( Vf=1.4v) , 1000

  hrs

  0 / 22 MIL-S-750 : 1026

  MIL-S-883 : 1005

  JIS C 7021 : B-1

  High Temperature / High

  Humidity Reverse Bias

  (H3TRB)

  Ta = 85 ± 3°C , Humi. = 85 % rh

  Pt: 80% * Vce (max rating) , 1000

  hrs

  0 / 22 JIS C 7021 : B-11

  High Temperature

  Reverse Bias (HTRB)

  Ta = 105 ± 3°C

  Pt: 100% * Vce (Max rating) ,

  1000 hrs

  0 / 22 JIS C 7021 : B-8

  Low Temperature Storage Ta = -50 ± 3°C , 1000 hrs 0 / 22 JIS C 7021 : B-12

  High Temperature

  Storage

  Ta = 125 ± 3°C , 1000 hrs 0 / 22 JIS C 7021 : B-10

  MIL-S-883 : 1008

  Endurance

  test

  Auto clave P = 15 PSIG , Ta = 121 °C ,

  Humi. = 100 % rh , 48 hrs

  0 / 22 JESD 22-A102-B

  Temperature Cycling

  (Air to Air)

  125°C ~ - 55 °C

  30 ~ 30 min , 100 cycles

  0 / 22 MIL-S-883 :1010

  JIS C 7021 : A-4

  Thermal Shock

  (Liquid to Liquid)

  125 ~ - 55°C

  t (dwell) = 5 min

  t (trans.) = 10 sec , 100 cycles

  0 / 22 MIL-S-202 : 107D

  MIL-S-750 : 1051

  MIL-S-883 :1011

  Solder Resistance Ta = 260 ± 3°C

  t (dwell) = 10 ± 1 sec

  0 / 22 MIL-S-750 : 2031

  JIS C 7021 : A-1

  Environmental

  Test

  Solder Ability Ta = 230 ± 3 °C

  t (dwell) = 5 ± 1 sec

  0 / 22

  CTR shift > 1.2