详细说明
PT334-6B-52 Phototransistor Features
․Fast response time
․High photo sensitivity
․Pb Free
PT334-6B-52Absolute Maximum Ratings (Ta=25℃)
Collector-Emitter Voltage: 30V
Emitter-Collector-Voltage: 5V
Collector Current:: 20mA
working temperature: - 25 ~ + 85℃
storage temperature: - 40 ~ + 85℃
soldering temperature: infrared baking furnace: 260 ℃/10 seconds, hand soldering: 350 ℃/ 30 seconds
Power Dissipation at (or below) 25℃ Free Air Temperature: 75mW
PT334-6B-52 Electro-Optical Characteristics (Ta=25℃)
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
| Collector – Emitter Breakdown Voltage | BVCEO | IC=100μA Ee=0mW/cm2 | 30 | --- | --- | V |
| Emitter-Collector Breakdown Voltage | BVECO | IE=100μA Ee=0mW/cm2 | 5 | --- | --- | V |
| Collector-Emitter Saturation Voltage | VCE)(sat) | IC=2mA Ee=1mW/cm2 | --- | --- | 0.4 | V |
| Rise Time | tr | VCE=5V, IC=1mA, RL=1000Ω | --- | 15 | --- | μS |
| Fall Time | tf | --- | 15 | --- | μS |
| Collector Dark Current | ICEO | Ee=0mW/cm2 VCE=20V | --- | --- | 100 | nA |
| On State Collector Current | IC(on) | Ee=1mW/cm2 VCE=5V | 1.77 | --- | 7.07 | mA |
| Wavelength ofPeak Sensitivity | λp | --- | --- | 940 | --- | nm |
| Rang of Spectral Bandwidth | λ0.5 | --- | --- | 760-1100 | --- | nm |
PT334-6B-52PhototransistorApplications: Infrared applied system,Camera,Printer,Cockroach catcher