RCR4953应用于单双色显示屏，稳定性好，性价格比高

　　Dual P-Channel Enhancement Mode Field Effect Transistor

　　z Features

　　For a single mosfet

　　VDS(V) = -30V, ID = -3.3A,

　　RDS(ON) = 61mΩ @VGS = -10V.

　　RDS(ON) = 77mΩ @VGS = -4.5V.

　　High density cell design for low RDS(ON).

　　z General Description

　　This P-Channel enhancement mode power FETs are

　　produced with high cell density, DMOS trench technology,

　　which is especially used to minimize on-state resistance. This

　　device is particularly suited for low voltage application such as