场效应管 AOWF8N50 万代N沟道MOS管 PDF参数

　　General Description

　　The AOWF8N50 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliverhigh levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along withguaranteed avalanche capability this part can be adoptedquickly into new and existing offline power supplydesigns.

　　Product Summary

　　VDS 600V@150℃

　　ID (at VGS=10V) 8A

　　RDS(ON) (at VGS=10V) < 0.85Ω

　　100% UIS Tested

　　100% Rg Tested