AOS晶体管 AOW29S50 N沟道场效应管MOSFET

　　General Description

　　The AOW29S50 has been fabricated using the advancedαMOSTM high voltage process that is designed to deliverhigh levels of performance and robustness in switchingapplications.By providing low RDS(on), Qg and EOSS along withguaranteed avalanche capability this part can be adoptedquickly into new and existing offline power supply designs.

　　Product Summary

　　VDS @ Tj,max 600V

　　IDM 120A

　　RDS(ON),max 0.15Ω

　　Qg,typ 26.6nC

　　Eoss @ 400V 6.3µJ

　　100% UIS Tested

　　100% Rg Tested