功率MOSFET AOTL160A60 万代N沟道场效应管

　　General Description

　　Proprietary αMOS5 TM technology

　　Low RDS(ON)

　　Optimized switching parameters for better EMI performance

　　Enhanced body diode for robustness and fast reverse recovery

　　Applications

　　PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters

　　Product Summary

　　VDS @ Tj,max 700V

　　IDM 96A

　　RDS(ON),max < 0.16Ω

　　Qg,typ 46nC

　　Eoss @ 400V 4.9μJ

　　100% UIS Tested

　　100% Rg Tested