科瑞芯电子供应 AOTF9N50 万代N沟道MOSFET

　　General Description

　　The AOT9N50 & AOTF9N50 have been fabricated usingan advanced high voltage MOSFET process that isdesigned to deliver high levels of performance androbustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along withguaranteed avalanche capability these parts can beadopted quickly into new and existing offline powersupply designs.

　　Product Summary

　　VDS 600V@150℃

　　ID (at VGS=10V) 9A

　　RDS(ON) (at VGS=10V) <0.85Ω

　　100% UIS Tested

　　100% Rg Tested