AOTF29S50 万代500V功率晶体管 PDF产品参数

　　General Description

　　The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 havebeen fabricated using the advanced aMOSTM high voltage process thatis designed to deliver high levels of performance and robustness inswitching applications.By providing low RDS(on), Qg and EOSS along with guaranteed avalanchecapability these parts can be adopted quickly into new and existingoffline power supply designs.

　　Product Summary

　　VDS @ Tj,max 600V

　　IDM 120A

　　RDS(ON),max 0.15Ω

　　Qg,typ 26.6nC

　　Eoss @ 400V 6.3μJ

　　100% UIS Tested

　　100% Rg Tested