供应AOS万代 AOTF2606L N沟道中压MOS晶体管

　　General Description

　　The AOT2606L & AOB2606L & AOTF2606L uses TrenchMOSFET technology that is uniquely optimized to providethe most efficient high frequency switching performance.Both conduction and switching power losses areminimized due to an extremely low combination ofRDS(ON), Ciss and Coss. This device is ideal for boostconverters and synchronous rectifiers for consumer,telecom, industrial power supplies and LED backlighting.

　　Product Summary

　　VDS 60V

　　ID (at VGS=10V) 72A

　　RDS(ON) (at VGS=10V)<6.5mΩ (<6.2mΩ*)

　　100% UIS Tested

　　100% Rg Tested