AOS万代 AOTF125A60FDL N沟道高压MOS晶体管

　　General Description

　　Proprietary αMOS5TM technology

　　Low RDS(ON)

　　Optimized switching parameters for better EMI performance

　　Enhanced body diode for robustness and fast reverse recovery

　　RoHS 2.0 and Halogen-Free Compliant

　　Applications

　　PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters

　　Product Summary

　　VDS @ Tj,max 700V

　　IDM 56A

　　RDS(ON),max < 0.125Ω

　　Qg,typ 48nC

　　Eoss @ 400V 6.8μJ

　　100% UIS Tested

　　100% Rg Tested