AOS晶体管 AOT286L 高性能N沟道中压MOSFET

　　General Description

　　The AOT286L/AOB286L uses Trench MOSFETtechnology that is uniquely optimized to provide the mostefficient high frequency switching performance. Bothconduction and switching power losses are minimizeddue to an extremely low combination of RDS(ON), Ciss andCoss. This device is ideal for boost converters andsynchronous rectifiers for consumer, telecom, industrialpower supplies and LED backlighting.

　　Product Summary

　　VDS 80V

　　ID (at VGS=10V) 70A

　　RDS(ON) (at VGS=10V)<6.0mΩ (<5.7mΩ*)

　　RDS(ON) (at VGS=6V)<7.9mΩ (<7.6mΩ*)

　　100% UIS Tested

　　100% Rg Tested