场效应管 AOT27S60L 万代N沟道高压MOSFET

　　General Description

　　The AOT27S60L & AOB27S60L & AOTF27S60L & AOTF27S60 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

　　By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

　　Product Summary

　　VDS @ Tj,max 700V

　　IDM 110A

　　RDS(ON),max 0.16Ω

　　Qg,typ 26nC

　　Eoss @ 400V 6μJ

　　100% UIS Tested

　　100% Rg Tested