万代高压MOS管 AONV110A60 封装DFN8x8-4L

　　General Description

　　Proprietary αMOS5TM technology

　　Low RDS(ON)

　　Optimized switching parameters for better EMI performance

　　Enhanced body diode for robustness and fast reverse recovery

　　Applications

　　PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters

　　Product Summary

　　VDS @ Tj,max 700V

　　IDM 140A

　　RDS(ON),max < 0.11Ω

　　Qg,typ 72nC

　　Eoss @ 400V 8.1μJ

　　100% UIS Tested

　　100% Rg Tested