万代MOS晶体管 AON6560 低压MOSFET场效应管

　　General Description

　　Latest Trench Power AlphaMOS (αMOS LV) technology

　　Very Low RDS(on) at 4.5VGS

　　Low Gate Charge

　　High Current Capability

　　RoHS and Halogen-Free Compliant

　　Application

　　High performance ORing, Efuse

　　Ultra high current battery charge/discharge

　　Product Summary

　　VDS 30V

　　ID (at VGS=10V) 200A

　　RDS(ON) (at VGS=10V) <0.68mΩ

　　RDS(ON) (at VGS=4.5V) <1.1mΩ

　　100% UIS Tested

　　100% Rg Tested