AOS万代 AOD3N40 N沟道中压MOSFET场效应管

　　General Description

　　The AOD3N40 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliverhigh levels of performance and robustness in popularAC-DC applications.By providing low RDS(on), Ciss and Crss along withguaranteed avalanche capability this device can beadopted quickly into new and existing offline powersupply designs.

　　Product Summary

　　VDS 500V@150℃

　　ID（VGS=10V）2.6A

　　RDS（ON）（VGs=10V）<3.1Ω

　　100% UIS Tested

　　100% Rg Tested