万代晶体管 AOD1N60 高性能N沟道高压MOSFET

　　General Description

　　The AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFETprocess that is designed to deliver high levels ofperformance and robustness in popular AC-DCapplications.By providing low RDS(on), Ciss and Crss along withguaranteed avalanche capability these parts can beadopted quickly into new and existing offline powersupply designs.

　　Product Summary

　　VDS@Tj，700V

　　ID（VGS=10V时）1.3A

　　RDS（ON）（VGS=10V时）<9Ω

　　100% UIS Tested

　　100% Rg Tested