AOB280A60L 万代N沟道高压600V功率晶体管

　　General Description

　　< Proprietary αMOS5TM technology

　　< Low RDS(ON)

　　< Optimized switching parameters for better EMI performance

　　< Enhanced body diode for robustness and fast reverse recovery

　　Product Summary

　　VDS @ Tj,max 700V

　　IDM 56A

　　RDS(ON),max<0.28Ω

　　Qg,typ 23.5nC

　　Eoss @ 400V 3.1mJ

　　Applications

　　100% UIS Tested

　　100% Rg Tested