INFINEON英飞凌 S29GL128S90TFI010 存储器

　　Distinctive Characteristics

　　CMOS 3.0 Volt Core with Versatile I/O

　　65 nm MirrorBit Eclipse Technology

　　Single supply (VCC) for read / program / erase (2.7 V to 3.6 V)

　　Versatile I/O Feature

　　- Wide I/O voltage range (VIO): 1.65 V to VCC

　　×16 data bus

　　Asynchronous 32-byte Page read

　　512-byte Programming Buffer

　　- Programming in Page multiples, up to a maximum of 512 bytes

　　Single word and multiple program on same word options

　　Automatic Error Checking and Correction (ECC) – internal hardware ECC with single bit error correction

　　Sector Erase

　　- Uniform 128-kbyte sectors

　　Suspend and Resume commands for Program and Erase operations

　　Status Register, Data Polling, and Ready/Busy pin methods to determine device status

　　Advanced Sector Protection (ASP)

　　- Volatile and non-volatile protection methods for each sector

　　Separate 1024-byte One Time Program (OTP) array with two lockable regions

　　Common Flash Interface (CFI) parameter table

　　Temperature Range / Grade

　　- Industrial (-40 °C to +85 °C)

　　- Industrial Plus(-40 °C to +105 °C)

　　- Automotive, AEC-Q100 Grade 3 (-40 °C to +85 °C)

　　- Automotive, AEC-Q100 Grade 2 (-40 °C to +105 °C)

　　100,000 Program / Erase Cycles

　　20 Years Data Retention