英飞凌 IRFR24N15DTRPBF 150V单N沟道MOS管

　　Features

　　Planar cell structure for wide SOA

　　Optimized for broadest availability from distribution partners

　　Product qualification according to JEDEC standard

　　Silicon optimized for applications switching below <100kHz

　　Industry standard surface mount package

　　Benefits

　　Low Gate-to-Drain Charge to Reduce Switching Losses

　　Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)

　　Fully Characterized Avalanche Voltage and Current

　　Lead-Free