IRFL024ZTRPBF 英飞凌55V单N沟道MOSFET

　　Description

　　This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance

　　per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.