IPT60R075CFD7 英飞凌N沟道高压超结MOSFET 深圳市科瑞芯电子供应

　　Features

　　Ultra-fast body diode

　　Low gate charge

　　Best-in-class reverse recovery charge (Qr)

　　Improved MOSFETreverse diode dv/dt and dir/dt ruggedness

　　Lowest FOM Rps(on)*Q。 and Rps(on)*Eoss

　　Best-in-class Ros(on) in SMD and THD packages

　　Product validation

　　Fully qualified according to JEDEC for Industrial Applications