英飞凌 IPT60R035CFD7 新型高压超结MOSFET

　　Features

　　Ultra-fast body diode

　　Low gate charge

　　.Best-in-class reverse recovery charge (Qr)

　　Improved MOSFET reverse diode dv/dt and dir/dt ruggedness

　　Lowest FOM Rps(on)*Q。 and Rps(on)*Eoss

　　Best-in-class Rps(on) inSMD and THD packages

　　Benefits

　　Excellent hard commutation ruggedness

　　Highest reliability for resonant topologies

　　Highest efficiency with outstanding ease-of-use / performance tradeoff

　　Enabling increased power density solutions