英飞凌 IPD70R360P7S N沟道超结MOSFET系列

　　Features

　　Extremely low losses due to very low FOM RDS(on)*Qg and RDS(on)*Eoss

　　Excellent thermal behavior

　　Integrated ESD protection diode

　　Low switching losses (Eoss)

　　Product validation acc. JEDEC Standard

　　Benefits

　　Cost competitive technology

　　Lower temperature

　　High ESD ruggedness

　　Enables efficiency gains at higher switching frequencies

　　Enables high power density designs and small form factors