IPB60R105CFD7 英飞凌600V耐压N沟道MOSFET

　　Features

　　Ultra-fast body diode

　　Low gate charge

　　Best-in-class reverse recovery charge (Qrr)

　　Improved MOSFET reverse diode dv/dt and diF/dt ruggedness

　　Lowest FOM RDS(on)*Qg and RDS(on)*Eoss

　　Best-in-class RDS(on) in SMD and THD packages

　　Benefits

　　Excellent hard commutation ruggedness

　　Highest reliability for resonant topologies

　　Highest efficiency with outstanding ease-of-use / performance tradeoff

　　Enabling increased power density solutions