供应英飞凌 IPB60R099P7 超结N沟道MOSFET

　　Features

　　Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness

　　Significant reduction of switching and conduction losses

　　Excellent ESD robustness >2kV (HBM) for all products

　　Better RDS(on)/package products compared to competition enabled by a low RDS(on)*A (below 1Ohm*mm²)

　　Fully qualified acc. JEDEC for Industrial Applications

　　Benefits

　　Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages

　　Simplified thermal management due to low switching and conduction losses

　　Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection

　　Suitable for a wide variety of applications and power ranges