INFINEON碳化硅MOSFET管 IMZA65R027M1H

　　Features

　　Optimized switching behavior at higher currents

　　Commutation robust fast body diode with low Qfr

　　Superior gate oxide reliability

　　Ti.max=175C and excellent thermal behavior

　　Lower Rps(on) and pulse current dependency on temperature

　　Increased avalanche capability

　　Compatible with standard drivers

　　Kelvin source provides up to 4 times lower switching losses