英飞凌 IMT65R057M1H 碳化硅MOSFET单管

　　Features

　　Optimized switching behavior at higher currents

　　Commutation robust fast body diode with low Qfr

　　Superior gate oxide reliability

　　Tj,max=175°C and excellent thermal behavior

　　Lower RDS(on) and pulse current dependency on temperature

　　Increased avalanche capability

　　Compatible with standard drivers

　　Kelvin source provides up to 4 times lower switching losses

　　Product validation

　　Fully qualified according to JEDEC for Industrial Applications