供应英飞凌 IMT65R022M1H 碳化硅MOSFET单管

　　Features

　　Optimized switching behavior at higher currents

　　Commutation robust fast body diode with low Qfr

　　Superior gate oxide reliability

　　Tj,max=175°C and excellent thermal behavior

　　Lower Rps(on) and pulse current dependency on temperature

　　Increased avalanche capability

　　Compatible with standard drivers

　　Kelvin source provides up to 4 times lower switching losses

　　Benefits

　　Unique combination of high performance, high reliability and ease of use

　　Ease of use and integration

　　Suitable for topologies with continuous hard commutation

　　Higher robustness and system reliability

　　Efficiency improvement

　　Reduced system size leading to higher power density