英飞凌IGBT二极管 IKW40N65H5 高速开关系列

　　Features and Benefits

　　High speed H5 technology offering

　　Best-in-Class efficiency in hard switching and resonant topologies

　　Plug and play replacement of previous generation IGBTs

　　650V breakdown voltage

　　Low gate charge QG

　　IGBT copacked with RAPID 1 fast and soft antiparallel diode

　　Maximum junction temperature 175°C

　　Qualified according to JEDEC for target applications

　　Pb-free lead plating; RoHS compliant

　　Complete product spectrum and PSpice Models