IGLD60R070D1 英飞凌600V增强型功率晶体管

　　Features

　　Enhancement mode transistor – Normally OFF switch

　　Ultra fast switching

　　No reverse-recovery charge

　　Capable of reverse conduction

　　Low gate charge, low output charge

　　Superior commutation ruggedness

　　Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)

　　Benefits

　　Improves system efficiency

　　Improves power density

　　Enables higher operating frequency

　　System cost reduction savings

　　Reduces EMI