IDW20G65C5B 英飞凌SiC肖特基势垒二极管

　　Features

　　Revolutionary semiconductor material - Silicon Carbide

　　Benchmark switching behavior

　　No reverse recovery/ No forward recovery

　　Temperature independent switching behavior

　　High surge current capability

　　Pb-free lead plating; RoHS compliant

　　Qualified according to JEDEC1 for target applications

　　Breakdown voltage tested at 9 mA

　　Optimized for high temperature operation

　　Benefits

　　System efficiency improvement over Si diodes

　　System cost / size savings due to reduced cooling requirements

　　Enabling higher frequency / increased power density solutions

　　Higher system reliability due to lower operating temperatures