INFINEON英飞凌 FM25V05-G 非易失性存储器

　　Features

　　■ 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64K × 8

　　High-endurance 100 trillion (1014) read/writes

　　151-year data retention (See Data Retention and Endurance on page 14)

　　NoDelay™ writes

　　Advanced high-reliability ferroelectric process

　　■ Very fast serial peripheral interface (SPI)

　　Up to 40-MHz frequency

　　Direct hardware replacement for serial flash and EEPROM

　　Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

　　■ Sophisticated write protection scheme

　　Hardware protection using the Write Protect (WP) pin

　　Software protection using Write Disable instruction

　　Software block protection for 1/4, 1/2, or entire array

　　■ Device ID

　　Manufacturer ID and Product ID

　　■ Low power consumption

　　300μA active current at 1 MHz

　　90μA (typ) standby current

　　5μA sleep mode current

　　■ Low-voltage operation: VDD = 2.0 V to 3.6 V

　　■ Industrial temperature: –40 C to +85 C

　　■ 8-pin small outline integrated circuit (SOIC) package

　　■ Restriction of hazardous substances (RoHS) compliant