新推出 CY62167DV30LL-55ZXIT 英飞凌存储器

　　Features

　　■ Thin small outline package (TSOP-I) configurable as 1M × 16 or as 2M × 8 SRAM

　　■ Wide voltage range: 2.2V-3.6 V

　　■ Ultra-low active power: Typical active current: 2mA at f =1MHz

　　■ Ultra-low standby power

　　■ Easy memory expansion with CE1, CE2 and OE features

　　■ Automatic power-down when deselected

　　■ Complementary metal oxide semiconductor (CMOS) for optimum speed / power

　　■ Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 48-pin TSOP I package

　　Maximum Ratings

　　Storage temperature -65°C to +150°C

　　Ambient temperature with power applied -55°C to +125°C

　　Supply voltage to ground potential -0.2 V to VCC + 0.3V

　　DC voltage applied to outputs in High-Z state [5, 6] -0.2 V to VCC + 0.3V

　　DC input voltage [5, 6] -0.2 V to VCC + 0.3V

　　Output current into outputs (LOW) 20mA

　　Static discharge voltage (per MIL-STD-883, Method 3015)>2001V

　　Latch-up current >200mA