INFINEON存储器芯片 CY62167DV30LL-55BVXI

　　Features

　　■ Thin small outline package (TSOP-I) configurable as 1 M × 16 or as 2 M × 8 SRAM

　　■ Wide voltage range: 2.2 V–3.6 V

　　■ Ultra-low active power: Typical active current: 2 mA at f = 1 MHz

　　■ Ultra-low standby power

　　■ Easy memory expansion with CE1, CE2 and OE features

　　■ Automatic power-down when deselected

　　■ Complementary metal oxide semiconductor (CMOS) for optimum speed / power

　　■ Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 48-pin TSOP I package