英飞凌 CY62157EV30LL-45BVXIT 存储器芯片

　　Features

　　■ Thin small outline package (TSOP) I package configurable as 512K × 16 or 1M × 8 static RAM (SRAM)

　　■ High speed: 45 ns

　　■ Temperature ranges

　　Industrial: –40 °C to +85 °C

　　Automotive-A: –40 °C to +85 °C

　　Automotive-E: –40 °C to +125 °C

　　■ Wide voltage range: 2.20 V to 3.60 V

　　■ Pin compatible with CY62157DV30

　　■ Ultra low standby power

　　Typical standby current: 2μA

　　Maximum standby current: 8μA (Industrial)

　　■ Ultra low active power

　　Typical active current: 6 mA at f = 1 MHz

　　■ Easy memory expansion with CE1, CE2, and OE features

　　■ Automatic power down when deselected

　　■ Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power

　　■ Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA), Pb-free 44-pin thin small outline package (TSOP) II and 48-pin TSOP I packages