CY62136EV30LL-45ZSXIT 英飞凌存储器芯片

　　Features

　　■ Very high speed: 45 ns

　　■ Wide voltage range: 2.20 V to 3.60 V

　　■ Pin compatible with CY62136CV30

　　■ Ultra low standby power

　　Typical standby current: 1μA

　　Maximum standby current: 7μA

　　■ Ultra low active power

　　Typical active current: 2 mA at f = 1 MHz

　　■ Easy memory expansion with CE and OE features

　　■ Automatic power down when deselected

　　■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power

　　■ Offered in a Pb-free 48-ball very fine ball grid array (VFBGA) and 44-pin thin small outline package (TSOP II) packages