CY15B064J-SXET 英飞凌64Kbit存储器芯片

　　Features

　　► 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8

　　High-endurance 10 trillion (1013) read/writes

　　121-year data retention (See Data Retention and Endurance on page 10)

　　NoDelay™ writes

　　Advanced high-reliability ferroelectric process

　　► Fast two-wire Serial interface (I2C)

　　Up to 1-MHz frequency

　　Direct hardware replacement for serial (I2C) EEPROM

　　Supports legacy timings for 100 kHz and 400 kHz

　　► Low power consumption

　　120μA (typ) active current at 100 kHz

　　6μA (typ) standby current

　　► Voltage operation: VDD = 3.0 V to 3.6 V

　　► Automotive-E temperature: –40℃ to +125℃

　　► 8-pin small outline integrated circuit (SOIC) package

　　► AEC Q100 Grade 1 compliant

　　► Restriction of hazardous substances (RoHS) compliant