热销中 BSC014N06NSSC 英飞凌N沟道MOSFET

　　特征描述

　　High performance silicon technology

　　Low top-side RthJC(0.72 K/W)

　　Package rated to TJmax=175ºC

　　Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products

　　优势

　　Lower conduction losses and switching losses for higher system efficiency

　　Improved heat dissipation for high power density and improved reliability

　　Superior power handling capability and ruggedness for longer lifetime

　　Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout chang