代理商供应 G6020MC1D 致新内存电源芯片
Features
< Synchronous Buck Converter (VBK1) at Mode1/3/4
■ Ultra-High Efficiency
■ Integrated 120mQ at VCC= 5V N-Channel MOSFET for Low Side
■ Integrated 150mQ at VCC=5V N-Channel MOSFET for High Side
■ No Current-Sense Resistor (Lossless ILIMIT)
■ Quasi-PWM with 100ns Load-Step Response Input Voltage Range: 3V to 5.5V
■ Output Voltage:
VBK1=2.5V at Mode1 (DDR4)
VBK1=1.8V at Mode3/4 (LPDDR4x/LPDDR5)
■ Continual Output Current: 1A
■ Internal Softstart: 1ms
■ 580kHz Switching Frequency
■ Cycle-by-Cycle Overcurrent Protection
■ Latched Output OVP & UVP Protections
< 25V/1A LDO (VBK1) at Mode2
■ Input Voltage Range: 3V to 5.5V
■ Output Voltage Fixed at 2.5V
■ Continual Output Current: 1A
■ Internal Softstart: 1ms
■ Support DDR4 VBK1 Requirement
< Synchronous Buck Converter (VBK2)
■ Utra-High Eficiency
■ Integrated 8.6mQ at VCC= 5V N-Channel MOSFET for Low Side
■ Integrated 22mQ at VCC =5V N-Channel MOSFET for High Side
■ No Current-Sense Resistor (Lossless ILIMIT)
■ Quasi-PWM with 100ns Load-Step Response
■ 4.5V to 26V Battery Input Range
■ Output Voltage:
VBK2=1.2V at Mode1/2 (DDR4)
VBK2=1.115V at Mode3 (LPDDR4x)
VBK2=1.065V at Mode4 (LPDDR5)
■ Continual Output Current: 8A
■ Internal Softstart: 1.6ms
■ 600kHz Switec hing Frequency
■ Cycle-by-Cycle Overcurrent Protection
■ Latched Output OVP & UVP Protections
< 0.6V/1.5A LDO (VLDO)
Output Voltage:
VLDO=(1/2)*VBK2 at Mode1/2 (DDR4)
VLDO=0.6V at Mode3 (LPDDR4x)
VLDO=0.5V at Mode4 (LPDDR5)
■ Continual Output Current: 1.5A
■ Require Only 10μF of Ceramic Output Capaci-tance
■ +30mV Accuracy for VLDO
■ Built-ln Soft- Start to Reduce the VLDOIN Surg-ing Current
■ Over Current Protection
■ Thermal Shutdown Protection
■ Buffered, Low Noise, +10mA Capability
■ 0.8% Output Accuracy
< Low Quiescent Current;150uA
< Power Good Indicator
< Output Discharge Function
< Power Up and Power Down Sequencing Control
< Non-Latch for OT and UVLO protections
< 18-pin 3mm x 3mm AQFN Package