Fet东沅 FKBB3103 高单元密度P沟道MOSFET

　　Description

　　The FKBB3103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

　　The FKBB3103 meet the RoHS and Green Product requirement, *** EAS guaranteed with full function reliability approved.

　　Absolute Maximum Ratings

　　Drain-Source Voltage: -30V

　　Gate-Source Voltage: +25V

　　Continuous Drain Current

　　lD@Tc=25%C: -32A

　　lD@Tc=100°C: -20A

　　ID@TA=25℃: -12.2~-7.7A

　　ID@TA=70℃: -9.8~-6.2A

　　Pulsed Drain Current2: -65A

　　Single Pulse Avalanche Energy3: 72.2mJ

　　Avalanche Current: -38A

　　Total Power Dissipation:

　　PD@TC=25℃: 29W

　　PD@TA=25℃: 4.2~1.67W

　　Storage Temperature Range: -55 to 150°C

　　Operating Junction Temperature Range: -55 to 150°C