蓝箭电子 IRFB3710 N沟道MOS场效应管

　　Descriptions

　　N-CHANNEL MOSFET in a TO-263 Plastic Package.

　　Electrical Characteristics(Ta=25℃)

　　Drain-Source Breakdown Voltage: 100V

　　Zero Gate Voltage Drain Current

　　VDS=100V VGS=0V: 20μA

　　VDS=100V VGS=0V TJ=125℃: 250μA

　　Gate-Body Leakage Current Forward: ±0.2μA

　　Gate Threshold Voltage: 2.0~4.0V

　　Static Drain-Source On-Resistance: 14~18mΩ

　　Forward Transconductance: 35S

　　Drain-Source Diode Forward Voltage: 1.3V

　　Input Capacitance: 2900pF

　　Output Capacitance: 290pF

　　Reverse Transfer Capacitance: 150pF

　　Turn-On Delay Time: 17ns

　　Turn-On Rise Time: 77ns

　　Turn-Off Delay Time: 41ns

　　Turn-Off Fall Time: 56ns