BRCS80N07DP 蓝箭N沟道MOS管 TO-252封装

　　Descriptions

　　N-CHANNEL MOSFET in a TO-252 Plastic Package.

　　Absolute Maximum Ratings(Ta=25℃)

　　< Drain-Source Breakdown Voltage: 70V

　　< Zero Gate Voltage Drain Current

　　VDS=68V VGS=0V: 1μA

　　VDS=68V TJ=55℃: 5μA

　　< Gate-Body Leakage Current Forward: 100nA

　　< Gate Threshold Voltage: 2.0V 2.8V 4.0V

　　< Total gate charge: 5.8~7mΩ

　　< Drain-Source Diode Forward Voltage: 1.4V

　　< Gate resistance: 1.25Ω

　　< Input Capacitance: 2180pF

　　< Output Capacitance: 614pF

　　< Reverse Transfer Capacitance: 110pF

　　< Total Gate Charge(10V) : 53~75nC

　　< Total Gate Charge(4.5V): 22~31nC

　　< Gate Source Charge: 17~31nC

　　< Gate Drain Charge: 5nC

　　< Turn-On Delay Time: 18ns

　　< Turn-On Rise Time: 20ns

　　< Turn-Off Delay Time: 33ns

　　< Turn-Off Fall Time: 4ns

　　< Body Diode Reverse Recovery Time: 26ns

　　< Body Diode Reverse Recovery Charge: 125nC