BRCS80N06DP 蓝箭TO-252封装N沟道场效应管

　　Descriptions

　　N-CHANNEL MOSFET in a TO-252 Plastic Package.

　　Features

　　Low RDS(on),low gate charge, low Crss, fast switching. Halogen-free Product.

　　Applications

　　Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products.

　　Absolute Maximum Ratings(Ta=25℃)

　　< Drain–Source Voltage: 60V

　　< Drain Current (Tc=25℃): 80A

　　< Drain Current (Tc=70℃): 65.6A

　　< Drain Current - Pulsed: 240A

　　< Gate–Body Leakage Voltage: ±20V

　　< Single Pulsed Avalanche Energy: 215mJ

　　< Avalanche Current: 23.2A

　　< Power Dissipation: 75W

　　< Junction Temperature Range: 150℃

　　< Storage Temperature Range: -55 to 150℃

　　< Maximum Junction-to-Ambient t≤10: 15℃/W

　　< Maximum Junction-to-Ambient Steady-State: 60℃/W

　　< Maximum Junction-to-Case Steady-State: 1.6℃/W