蓝箭电子 BRCS7002K2ZK N沟道MOS场效应管

　　Descriptions

　　N-Channel Enhancement Mode Field Effect Transistor in a DFN1006-3L Plastic Package.

　　Features

　　Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV.HF Product.

　　Applications

　　Intended for use in general purpose switching and phase control applications.

　　Absolute Maximum Ratings(Ta=25℃)

　　< Drain-Source Voltage: 60V

　　< Zero Gate Voltage Drain Current: 1.0μA

　　< Gate-Source Leakage: ±10μA

　　< Static Drain–Source On–Resistance:

　　RDS(on)(1): 1.7~2mΩ

　　RDS(on)(2): 1.9~2.5mΩ

　　< Drain–Source Diode Forward Voltage: 1.35V

　　< Gate Threshold Voltage: 1.0V 1.4V 2.0V

　　< Input Capacitance: 25~50pF

　　< Output Capacitance: 11~25pF

　　< Reverse Transfer Capacitance: 2.5~5pF

　　< Total Gate Charge (4.5V): 0.7nC

　　< Threshold Gate Charge: 0.1nC

　　< Gate−to−Source Charge: 0.3nC

　　< Gate−to−Drain Charge: 0.1nC

　　< Turn–On Delay Time: 12.2ns

　　< Turn–On Rise Time: 9.0ns

　　< Turn–Off Delay Time: 55.8ns

　　< Turn–Off Fall Time: 20ns